1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com tn2130 general description this low threshold, enhancement-mode (normally-off) transistor utilizes a vertical dmos structure and supertexs well-proven, silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coef?cient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. n-channel enhancement-mode vertical dmos fet absolute maximum ratings parameter value drain-to-source bv dss drain-to-gate bv dgs gate-to-source 20v operating and storage temperature -55 o c to +150 o c soldering temperature* 300 o c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. * distance of 1.6mm from case for 10 seconds. ordering information device package option bv dss /bv dgs (v) r ds(on) (max) () v gs(th) (max) (v) to-236ab (sot-23) tn2130 TN2130K1-G 300 25 2.4 -g indicates package is rohs compliant (green) pin con?guration to-236ab (sot-23) (k1) product marking to-236ab (sot-23) (k1) n1tw w = code for week sealed = green packagin g drain sourc e ga te features ? free from secondary breakdown ? low power drive requirement ? ease of paralleling ? low c iss and fast switching speeds ? excellent thermal stability ? integral source-drain diode ? high input impedance and high gain applications logic level interfaces C ideal for ttl and cmos solid state relays battery operated systems photo-voltaic drives analog switches general purpose line drivers telecom switches ? ? ? ? ? ? ? package may or may not include the following marks: si or
2 tn2130 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com electrical characteristics (t a = 25 o c unless otherwise speci?ed) sym parameter min typ max units conditions bv dss drain-to-source breakdown voltage 300 - - v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 0.8 - 2.4 v v gs = v ds , i d = 1.0ma v gs(th) change in v gs(th) with temperature - - -5.5 mv/ o c v gs = v ds , i d = 1.0ma i gss gate body leakage - - 100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current - - 10 a v gs = 0v, v ds = max rating - - 100 v ds = 0.8max rating, v gs = 0v, t a = 125 o c i d(on) on-state drain current 250 - - ma v gs = 10v, v ds = 25v r ds(on) static drain-to-source on-state resistance - - 25 v gs = 4.5v, i d = 120ma r ds(on) change in r ds(on) with temperature - - 1.1 %/ o c v gs = 4.5v, i d = 120ma g fs forward transductance - 250 - mmho v ds = 25v, i d = 100ma c iss input capacitance - - 50 pf v gs = 0v, v ds = 25v, f = 1.0mhz c oss common source output capacitance - - 15 c rss reverse transfer capacitance - - 5.0 t d(on) turn-on delay time - - 10 ns v dd = 25v, i d = 120ma, r gen = 25 t r rise time - - 7.0 t d(off) turn-off delay time - - 12 t f fall time - - 15 v sd diode forward voltage drop - - 1.8 v v gs = 0v, i sd = 120ma t rr reverse recovery time - 400 - ns v gs = 0v, i sd = 120ma notes: all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) all a.c. parameters sample tested. 1. 2. notes: ? i d (continuous) is limited by max rated t j . thermal characteristics package i d (continuous) ? (ma) i d (pulsed) (ma) power dissipation @t a = 25 o c (w) jc ( o c/w) ja ( o c/w) i dr ? (ma) i drm (ma) to-236ab (sot-23) 85 200 0.36 200 350 85 200 switching waveforms and test circuit 90% 10% 90% 90% 10% 10% puls e genera to r v dd r l outpu t d.u.t . t (on) t d(on) t (off ) t d(off) t f t r inpu t input output 10v v dd r gen 0v 0v
3 tn2130 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com typical performance curves output characteristics 1.0 0.8 0.6 0.4 0.2 0 0 1 0 2 0 3 0 4 0 5 0 v ds (volts) i d ) s e r e p m a ( saturation characteristic s 0. 5 0. 4 0. 3 0. 2 0. 1 0 2 4 6 10 8 v ds (volts ) i d ) s e r e p m a ( maximum rated safe operating area 0 1000 100 10 0.01 0.1 1.0 0.001 i ) s e r e p m a ( d thermal response characteristics ) d e z i l a m r o n ( e c n a t s i s e r l a m r e h t 1. 0 0. 8 0. 6 0. 4 0. 2 0.001 1 0 0.01 0. 1 1.0 t p (seconds) transconductance vs. drain current 1.0 0.4 0.2 0.8 0.6 0 0 0.1 0.2 g s f ) s t n e m e i s ( i d (amperes) v ds (volts) power dissipation vs. temperature 0 1 50 10 0 50 1. 0 0. 8 0. 6 0. 4 0. 2 0 12 5 75 25 t a (c) p d ) s t t a w ( sot-23 (pulsed ) v gs = 10 v 0 0 v gs =10v sot-23 (dc ) sot-23 0.3 0.5 0.4 2v 6v v ds v ds = 15v t a = 25c sot-2 3 t a = 25c p d = 0.36 w t a = -55c 25c 125 c 2v 3v 4v 6v 8v 3v 4v
4 tn2130 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www .supertex.com typical performance curves (cont.) gate drive dynamic characteristic s v s g ) s t l o v ( t j (c) v ) h t ( s g ) d e z i l a m r o n ( r ) n o ( s d ) d e z i l a m r o n ( v th and r ds variation with temperatur e on-resistance vs. drain current r ) n o ( s d ) s m h o ( bv dss variation with temperature v b s s d ) d e z i l a m r o n ( t j (c ) transfer characteristics i d ) s e r e p m a ( capacitance vs. drain-to-source voltage 50 ) s d a r a f o c i p ( c i d (amperes) 0 1 0 2 0 3 0 4 0 25 0 0 2 4 6 8 10 -5 0 0 50 100 150 1. 1 1. 0 50 40 30 20 10 0 1.2 1.1 1.0 0.9 0.8 10 8 6 4 2 0 0 .2 0.4 0.6 0.8 1.0 -5 0 0 50 100 150 28pf v ds = 10 v v ds = 40 v v gs = 4.5v v gs = 10v 0 0 .2 0. 4 0.6 1.0 0.8 f = 1mhz 0. 9 80 pf 2.0 1.6 1.2 0.8 0.4 0 v gs(th) @ 1m a r ds(on ) @ 4.5v, 120m a 0 1. 0 0. 8 0. 6 0. 4 0. 2 0 t a = -55 c v ds = 15v 125c q g (nanocoulombs ) v ds (volts) v gs (volts) v ds = 15 v c iss c os s c rss 25c
supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate product liability indemnification insurance agreement. supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. no responsibility is assumed for possible omissions and inaccuracies. circuitry and specifications are subject to change without notice. for the latest product specifications refer to the supertex inc. website: http//www .supertex.com . ?2009 all rights reserved. unauthorized use or reproduction is prohibited . 1235 bordeaux drive, sunnyvale, ca 94089 te l: 408-222-8888 www .supertex.com 5 tn2130 (the package drawing(s) in this data sheet may not re?ect the most current speci?cations. for the latest package outline information go to http://www.supertex.com/packaging.htm l .) doc.# dsfp-tn2130 a022309 3-lead to-236ab (sot-23) package outline (k1) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch symbol a a1 a2 b d e e1 e e1 l l1 dimension (mm) min 0.89 0.01 0.88 0.30 2.80 2.10 1.20 0.95 bsc 1.90 bsc 0.20 ? 0.54 ref 0 o nom - - 0.95 - 2.90 - 1.30 0.50 - max 1.12 0.10 1.02 0.50 3.04 2.64 1.40 0.60 8 o jedec registration to-236, variation ab, issue h, jan. 1999. ? this dimension is a non-jedec dimension. drawings not to scale. supertex doc.#: dspd-3to236abk1, version b072208. vi ew b vi ew a - a side v iew to p v iew vi ew b
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